Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
61 (1992), S. 1316-1318
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
A pnp Si heterojunction bipolar power transistor has been fabricated using an amorphous Si0.7B0.3 alloy as a wide band-gap emitter. The amorphous alloy is formed by co-deposition of B and Si: it has a low resistivity of 2.5×10−3 Ω cm at room temperature after annealing at 1000 °C for 30 min and a band gap of 1.70 eV when annealed at 1100 °C for 20 min. In order to make a direct comparison, a conventional transistor with a diffused emitter and a polycrystalline silicon (poly-Si) emitter transistor have also been fabricated. It is shown that an amorphous Si0.7B0.3 alloy emitter transistor can have an electrical current gain 2–5 times higher than a poly-Si emitter transistor and 20 times higher than a conventional transistor.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.107577
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