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C54-TiSi2 formed by direct high current Ti-ion implantation (1993)

Zhu, D. H. ; Tao, K. ; Pan, F. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 2356-2358

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report, in this letter, the formation of TiSi2 by direct Ti-ion implantation into silicon wafers using a metal vapor vacuum arc ion source. Implantation was conducted by 80 KeV Ti ions to a dose of 5×1017/cm2 with various ion current densities. When the ion current density exceeded 100 μA/cm2, the equilibrium TiSi2 of the C54 structure was uniquely formed. Additional evidence of the formation of C54-TiSi2 was given by the resistivity measurements, i.e., the sheet resistivity was below 3.0 Ω/(D'Alembertian). The formation mechanism is also discussed in terms of the beam heating effect during implantation.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.109417

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