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Enhanced characteristics of InGaAsP buried quaternary lasers with pressures up to 1.5 GPa (1993)

Patel, D. ; Menoni, C. S. ; Temkin, H. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 2459-2461

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Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Pressure dependent measurements of the threshold current, differential quantum efficiency, and lasing wavelength of a ∼1.3 μm bulk InGaAsP semiconductor laser performed in a diamond anvil cell up to 1.5 GPa are reported. Results show a 40% decrease in the threshold current and a simultaneous enhancement in the differential quantum efficiency of approximately 350%. Large wavelength tunability of 140 nm is observed in this pressure range at room temperature. Calculations indicate that a reduction of the Auger recombination rate is likely to be the dominant loss mechanism responsible for the observed changes in the laser threshold current in this pressure range.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.109318

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