ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial lithium tantalate thin films were grown on sapphire substrates by metal-organic chemical-vapor deposition using a two-step growth process. After an initial thin (≈30–100 A(ring) thick) amorphous buffer layer of LiTaO3 was deposited and annealed to induce crystallization by solid phase epitaxy (SPE), a second, thicker amorphous lithium tantalate layer was deposited and also crystallized using SPE. The use of the buffer layers substantially improved the crystalline quality of the heteroepitaxial films, with the thickest buffer layer providing the best results. The films were characterized by ion channeling, x-ray diffraction and scanning electron microscopy.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110409