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Thermal stability of GaN investigated by low-temperature photoluminescence spectroscopy (1993)

Lin, M. E. ; Sverdlov, B. N. ; Morkoç, H.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 63 (1993), S. 3625-3627

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have studied the thermal behavior of 1-μm-thick GaN films grown by plasma-enhanced molecular beam epitaxy. Samples were annealed at elevated temperatures in a nitrogen environment and were characterized by low-temperature photoluminescence (PL). After GaN samples were annealed at up to 700 °C, the free-exciton transition PL line intensity improved. This PL line intensity degraded when annealing temperatures reached 900 °C. After annealing at 900 °C, GaN samples with inferior crystalline quality exhibited a line at 2.3 eV attributed to point defects and antisite defects.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.110069

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