ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Carbon nitride films have been formed on Si(100) substrates by laser ablation of graphite under a low energy nitrogen ion beam bombardment. Data of Raman shift and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. Time-of-flight measurements suggest the existence of paracyanogen-like materials, such as C4N4, in the films. High energy backscattering spectrometry has shown that the percentage of N content in the film is 41% or so. The x-ray diffraction and transmission electron micrograph measurements have also been taken to characterize the crystal properties of the obtained films. Qualitative tests indicate the films of high Vickers hardness Hv, and of good adhesion to the silicon substrates.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112052