Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 123-125
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The near surface regions of the single crystals of LaAlO3 and NdGaO3 are disordered to a depth of 150 nm by oxygen ion implantation. Thermally induced solid state epitaxial regrowth kinetics of these damaged layers are studied using ion channeling. It is seen that the regrowth in LaAlO3 samples starts at a temperature of 450 °C for 1 h in oxygen atmosphere. Most of the disordered region recovers as the annealing temperature is increased to 600 °C. Some end of range damage remains even after annealing at 1100 °C for 1 h. In the case of NdGaO3, the epitaxial regrowth starts at 650 °C. As the annealing temperature is increased to 900 °C, practically all the damaged region recovers. The Arrhenius plots indicate a distinct epitaxial-regrowth regime with different activation energies for the two cases. The implication of these results on the technology of high temperature superconducting circuit fabrication is discussed. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116776
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