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Correlation between visible and infrared (1.54 μm) luminescence from Er-implanted porous silicon (1996)

Wu, X. ; Hömmerich, U. ; Namavar, F. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 69 (1996), S. 1903-1905

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A photoluminescence excitation (PLE) study was performed of Er-implanted porous Si with two different porosities. Erbium was implanted at a dose of 1×1015 cm−2 at 380 keV and the samples were annealed for 30 min at temperatures from 650 to 850 °C. We observed that PLE spectra from Er3+ at 1.54 μm are nearly identical to those from the visible-emitting porous Si layers. Our results provide the first direct experimental evidence that infrared photoluminescence at 1.54 μm arises from Er3+ ions in porous Si and that ions are excited through the recombination of excess carriers spatially confined in Si nanograms. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.117616

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