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Preparation of piezoelectric-coefficient modulated multilayer film ZnO/Al2O3 and its ultrahigh frequency resonance (1997)

Hu, W. S. ; Liu, Z. G.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 71 (1997), S. 548-550

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Multilayer films composed of piezoelectrically active ZnO and inactive Al2O3 layers were prepared on silicon by a pulsed laser deposition technique. The ZnO layers were completely (001) textured to generate a single piezoelectric coefficient d33 perpendicular to the substrate surface and the Al2O3 layers were amorphous at 375 °C. The interfacial sharpness and the film orientation were analyzed by low and high angle x-ray diffraction θ–2θ scanning. High frequency resonance of 10.6 GHz was measured and higher values up to 100 GHz are expected in the multilayer films with periods 320 nm or smaller. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.119605

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