Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 1156-1158
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We fabricated submicron-sized intrinsic Josephson junctions by the focused-ion-beam (FIB) etching method. The principal result was a reduction of the in-plane junction area to 0.3 μm2 by direct FIB etching with no degradation in the critical transition temperature (Tc). In the current (I)–voltage (V) characteristics of these stacks, the gap structure and the normal state resistance are clearly observed together with a reduction of the Joule heating and disappearance of the branch structure. The Coulomb staircase structure was found in the I–V curves of submicron junctions as a result of their small effective capacitance of fF order. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123472
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