Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 1745-1747
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The inter-sub-level transitions in modulation-doped Ge quantum dots are observed. The dot structure is grown by molecular-beam epitaxy, and consists of 30 periods of Ge quantum dots sandwiched by two 6 nm boron-doped Si layers. An absorption peak in the midinfrared range is observed at room temperature by Fourier transform infrared spectroscopy, which is attributed to the transitions between the first two heavy-hole states of the Ge quantum dots. This study suggests the possible use of modulation-doped Ge quantum dots for improved infrared detector applications. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124806
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