Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 2758-2760
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A stable phase of relatively large hexagonal-wurtzite silicon crystals (up to 20 μm) was directly deposited at low pressure using ultraviolet laser ablation. The films were grown on a variety of substrates at room temperature from a single crystal, cubic silicon target. Crystallites of the hexagonal-wurtzite phase of silicon were clearly identified using selected area electron diffraction. Further support for this identification was provided by confocal scanning micro-Raman spectroscopy. The deposition of hexagonal silicon films may lead to novel two-dimensional optoelectronic devices, and pave the way to studies of the electronic properties of this lower symmetry, uncommon silicon phase. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125140
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