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Effect of indirect minima carrier population on the output characteristics of AlGaInP light-emitting diodes (1999)

Patel, D. ; Pikal, J. M. ; Menoni, C. S.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 75 (1999), S. 3201-3203

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We show that carrier transfer to the indirect X level in the confining layer is responsible for most of the substantial decrease in the efficiency of AlGaInP light-emitting diodes (LEDs) operating at short wavelengths. Carrier transfer to the confining X level was obtained by reducing the separation between the AlGaInP direct Γ minimum and the X levels by varying the Al composition in the active region and by the application of hydrostatic pressure. Carrier transfer to the confining X level appeared as an additional peak in the electroluminescence (EL) and resulted in a significant decrease of the LED efficiency. A simple model of the EL emission that takes into account carrier population in the X minima was found to be in excellent agreement with the measured EL behavior. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.125277

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