Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 3396-3398
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Completely 〈111〉-textured Pb(Ta0.05Zr0.48Ti0.47)O3 (PTZT) films are grown on Pt/TiO2/SiO2/Si(001) substrates by pulsed-laser deposition using SrRuO3 as a buffer layer. It is argued that the small lattice-mismatch in (111) plane between Pt and SrRuO3 and the compatible perovskite structures for SrRuO3 and PTZT are responsible for the complete (111) orientation of PTZT films. The as-fabricated PTZT ferroelectric capacitor exhibits large remnant polarizations +Pr=18.4 μC/cm2, and −Pr=−16.0 μC/cm2, and very low leakage current as well. The excellent fatigue-resisting property of PTZT films in terms of the polarization degradation is demonstrated. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125305
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