Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 4130-4132
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Schottky contacts were formed on n- and p-type GaN after either a conventional surface cleaning step in solvents, HCl and HF or with an additional treatment in (NH4)2S to prevent reformation of the native oxide. Reductions in barrier height were observed with the latter treatment, but there was little change in diode ideality factor. A simple model suggests that an interfacial insulating oxide of thickness 1–2 nm was present after conventional cleaning. This oxide has a strong influence on the contact characteristics on both n- and p-type GaN and appears to be responsible for some of the wide spread in contact properties reported in the literature. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125559
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