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Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties (2000)

Li, Y. ; Meng, G. W. ; Zhang, L. D.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 76 (2000), S. 2011-2013

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Ordered semiconductor ZnO nanowire arrays embedded in anodic alumina membranes (AAM) were fabricated by generating alumina templates with nanochannels, electrodepositing Zn in them, and then oxidizing the Zn nanowire arrays. The polycrystalline ZnO nanowires with the diameters ranging from 15 to 90 nm were uniformly assembled into the hexagonally ordered nanochannels of the AAM. Photoluminescence (PL) measurements show a blue PL band in the wavelength range of 450–650 nm caused by the singly ionized oxygen vacancy in ZnO nanowires. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.126238

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