Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 882-884
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We studied effects of oxygen plasma treatment on the ferroelectric Pb(Zrx,Ti1−x)O3 (PZT) films prepared by a sol-gel method. Electrical characteristics of the films were found to be improved considerably by exposure to the O2 plasma, with enhanced remanent polarization and decreased leakage current densities. Chemical bonding analysis by means of x-ray photoelectron spectroscopy in the Pb 4f region indicated that the intensity from the perovskite PZT phase increased considerably after the O2 plasma treatment, giving rise to the improved performances of the PZT films. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125617
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