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Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications (2002)

Wei, Y. ; Gin, A. ; Razeghi, M.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 80 (2002), S. 3262-3264

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report on the temperature dependence of the photoresponse of very long wavelength infrared type-II InAs/GaSb superlattice based photovoltaic detectors grown by molecular-beam epitaxy. The detectors had a 50% cutoff wavelength of 18.8 μm and a peak current responsivity of 4 A/W at 80 K. A peak detectivity of 4.5×1010 cm Hz1/2/W was achieved at 80 K at a reverse bias of 110 mV. The generation–recombination lifetime was 0.4 ns at 80 K. The cutoff wavelength increased very slowly with increasing temperature with a net shift from 20 to 80 K of only 1.2 μm. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1476395

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