Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 847-849
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A device structure is reported for the fabrication of nanoscale organic transistors. In this structure, a self-assembled monolayer is used to define the channel length, as well as acting as the semiconducting material. High current modulation and high current output are demonstrated with 4,4′-dithiolbiphenylene. Various dielectric materials, such as SiO2, Al2O3, and a self-assembled silane monolayer, have been shown to result in high-performance transistors. Finally, nanopatterning can also be achieved by using an insulating alkanethiol to define the channel length of a conventional organic field-effect transistor. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1445804
|
Location |
Call Number |
Limitation |
Availability |
