ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract An analysis has been performed of photoconductivity spectral characteristics of semiconductors with an exponential fundamental absorption edge as functions of the surface recombination rate and sample thickness. It is shown, in particular, that in crystals of CdxHg1−x Te (x≈0.2) the spectral position of the photoconductivity maximum over a wide range of values of these parameters can be used, with an error not exceeding 1%, to determine the effective band gap and, consequently, the composition of the material.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187842