ISSN:
1063-7826
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Elektrotechnik, Elektronik, Nachrichtentechnik
,
Physik
Notizen:
Abstract Spectral and integrated photoconductivities in chromium-disilicide epitaxial films grown on single-layer silicon substrates have been studied in the photon energy range 0.5–1.6 eV. The region of the photoconductivity maximum observed at 1.23 eV corresponds to the third direct interband transition in chromium disilicide at 0.9–0.95 eV. Possible reasons for the weak photoconductivity signal in the region of the fundamental absorption edge are analyzed.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1134/1.1187262