ISSN:
1572-817X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The experimental results obtained by the investigation of stimulated FIR emission from dopedp-type germanium andp-type silicon by hot holes in crossedE andH fields atТ = 10 and 80 K are reported. The analysis of the emission intensity fromp-type germanium as a function ofE andH fields permits us to draw a conclusion about the important role of quantization of the energy spectrum of light holes and the contribution of light hole transitions with Δn = 2 to the amplification of FIR radiation. A new region of generation is demonstrated inp-type germanium under uniaxial stress. The first experimental results on stimulated FIR emission fromp-type silicon are reported.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00619769
