ISSN:
1573-9228
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract A study was made of the electroabsorption kinetics, as well as of the spectral and field dependences of the contrast and efficiency of modulation of light in Al-SiO2-GaAs-n+-GaP structures near the fundamental absorption edge of GaAs (875–910 nm). Values of the contrast amounting to 10–12 and the modulation efficiency of 30–40% were achieved. It was demonstrated that optical data storage was possible with the aid of an He-Ne laser. Optical memory was observed in Al-SiO2-(n-n+-GaAs structures on application of voltage pulses causing carrier accumulation; the effect was due to the capture of electrons at the SiO2-GaAs interface. The absorption edge of epitaxial GaAs films on GaP substrates had an exponential profile in the photon energy range 1.37≤hν≤1.40 eV infields 0≤E 5≤6.5·104 V/cm. An empirical relationship was obtained for the spectral and field dependences of the absorption coefficient.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00896446
