ISSN:
0142-2421
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
XPS analysis was used to characterize Si (100) targets bombarded with an O2+ beam with energies ranging between 5.00 and 0.50 keV and incident angles between 0° and 75°. In this energy range and at normal incidence a homogeneous SiO2 layer is built up in a sequential suboxide replacement mechanism, while for bombardments at 5.00 keV and incident angles between 28° and 55° only a heterogeneous layer is formed. The latter contain elemental silicon, evenly spread in the altered layer, and all possible oxidized chemical states. For bombardments at high glancing angles (55°-75°) only a few suboxides are observed. Finally, a linear enhancement for the Si+ secondary ion yield w.r.t. the Si4+ relative concentration is found, except for very high Si4+ level concentrations where a strong non-linear increase takes place.
Additional Material:
7 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/sia.740190159
