Note: Front Cover -- Defects in Silicon -- Copyright Page -- Table of Contents -- Preface -- Chapter 1. Status and future of silicon crystal growth -- 1. Introduction -- 2. Growth techniques for silicon crystals -- 3. CZ silicon growth -- 4. FZ silicon growth -- 5. Segregation of impurities -- 6. Melt flows -- 7. Impurity striations -- 8. Macroscopic impurity distribution -- 9. Altering the melt flows -- 10. Future aspects -- References -- Chapter 2. Microscopic aspects of oxygen precipitation in silicon -- 1. Introduction -- 2. Current status -- 3. Thermodynamic and kinetic model [7] -- 4. Applications of the preceding model -- Chapter 3. Hydrogen in silicon: state, reactivity and evolution after ion implantation -- 1. Introduction -- 2. Passivation of interface traps -- 3. Passivation of group III acceptors -- 4. High fluence hydrogen implantation -- 5. Conclusions -- References -- Chapter 4. Pairing of acceptors with interstitial donors in silicon and germanium -- 1. Introduction -- 2. Experimental details -- 3.Results and discussion -- 4. Conclusions -- Acknowledgments -- References -- Chapter 5. Hydrogen passivation and thermal reactivation of zinc double acceptors in silicon -- 1. Introduction -- 2. Experimental details -- 3. Zinc-related levels -- 4. Thermal stability -- 5. Hydrogen passivation -- 6. Reactivation -- 7. Summary -- References -- Capter 6. A Hydrogen-Carbo n Relate d Deep Donor in Crystalline n-Si:C -- 1. Introduction -- 2. Sample preparation and characterization -- 3. DLTS measurements -- 4. The dissociation behavior of the hydrogen-carbon related defect -- 5. Discussion -- 6. Conclusion -- Acknowledgment -- References -- Chapter 7. Radiative recombination channels due to hydrogen in crystalline silicon -- 1. Introduction -- 2. Experimental details -- 3 . Experimental data -- 4. Discussion -- Acknowledgments -- References. , Chapter 8. Defects created by hydrogen implantation into silicon -- 1. Introduction -- 2. Experimental details -- 3. Results -- 4. Conclusions -- Acknowledgments -- References -- Chapter 9. Hydrogenation of shallow and deep levels in silicon -- 1. Introduction -- 2. Experiment -- 3 . Results and discussion -- 4. Conclusions -- References -- Chapter 10. Hydrogen-related vibrations in crystalline silicon -- 1. Introduction -- 2. Calculation method -- 3. Calculation results -- 4. Discussion -- Acknowledgments -- References -- Chapter 11. Transition metals in silicon and their gettering behaviour -- 1. Introduction -- 2. The properties of transition metals in silicon -- 3. Gettering of transition metals -- References -- Chapter 12. Donor formation in silicon owing to ion implantation of the rare earth metal erbium -- 1. Introduction -- 2. Sample preparation -- 3 .Capacitance-voltage measurements -- 4. DLTS measurements -- 5. Discussion -- Acknowledgments -- References -- Chapter 13. 1.54 μm photoluminescence of erbium-implanted silicon -- 1. Introduction -- 2. Experimental details -- 3. Conclusions -- References -- Chapter 14. Fast-diffusing defects induced by copper in silicon -- 1. Introduction -- 2. Experimental details -- 3. Chemomechanically polished samples -- 4. Copper-diffused samples -- 5. Discussion -- Acknowledgments -- References -- Chapter 15. Quenched-in, fast-diffusing defects in silicon studied by the perturbed angular correlation method -- 1. Introduction -- 2. Experiment -- 3. Results -- 4. Discussion -- Acknowledgment -- References -- Chapter 16. Recent developments in ion implantation in silicon -- 1. Introduction -- 2. Pre-amorphized and annealed layers -- 3. Ion beam synthesis -- References -- Chapter 17. A study of carbon-implanted silicon for light-emittin g diode fabrication -- 1. Introduction -- 2. Experimental details. , 3. Depth distribution and damage -- 4. Substitutionality and precipitation -- 5. Strain compensation: isovalent solid solutions -- Acknowledgments -- References -- Chapter 18. Role of point defects in the transient diffusion and clustering of implanted boron in silicon -- 1. Interactions between boron atoms and poin tdefects -- 2. Application to transient annealing -- 3. A test of alternative models: spatial vs.concentration dependence -- 4. Conclusions -- References -- Chapter 19. The effect of phosphorus background concentration on the diffusion of tin , arsenic and antimony in silicon -- 1. Introduction -- 2. Experimental details -- 3. Results and discussion -- Acknowledgments -- References -- Chapter 20. Heavy metal contamination during integrated-circuit processing : measurements of contamination level and internal gettering efficiency by surface photovoltage -- 1. Introduction -- 2. Surface photovoltage measurements -- 3.Effect of heavy metals on generation andelectric activity of crystallographic defects -- 4. Effect of heavy metal contamination oncircuit yield -- 5. Efficiency of internal gettering -- 6. Sources of heavy metals -- 7. Conclusion and summary -- References -- Chapter 21. Electronic behaviour of decorated stacking faults in silicon -- 1. Introduction -- 2. Experimental details -- 3. Photoluminescence measurements -- 4. DLTS results -- 5. Discussion -- 6. Conclusions -- Acknowledgments -- References -- Chapter 22. Activation and gettering of intrinsic metallic impurities during rapid thermal processing -- 1. Introduction -- 2. Experimental procedure -- 3. Results and discussion -- 4. Conclusion -- Acknowledgments -- References -- Chapter 23. Gold diffusion in silicon: enhanced substitutional gold formation by rhodium doping -- 1. Introduction -- 2. Experimental details -- 3. Results and interpretation. , 4. Discussion and conclusion -- Acknowledgments -- References -- Chapter 24. Effect of deformation-induced defects on the Fermi level position at recombination centers in n-Si -- 1. Introduction -- 2. Sample preparation -- 3. Experimental details and results -- 4. Discussion -- References -- Chapter 25. Precipitation at grain boundaries in silicon -- 1. Introduction -- 2. Experimental details -- 3. Electrical properties -- 4. TEM observations -- 5. Conclusions -- References -- Chapter 26. Effects of deuterium plasma treatments on the electrical properties of boron-doped silicon -- 1. Introduction -- 2. Experimental procedure -- 3. Results -- 4. Discussion -- 5. Conclusions -- Acknowledgments -- References -- Chapter 27. Modelling of recombination activity and passivation by hydrogen of dislocations in silicon wafers -- 1. Introduction and model -- 2. Experimental details -- 3. Results and discussion -- 4. Conclusions -- Acknowledgments -- References -- Chapter 28. Formation of buried CoSi 2 layers by ion implantation, studied by Mossbauer spectroscopy and Rutherford backscattering spectroscopy -- 1. Introduction -- 2. Experimental details -- 3. Results -- 4. Conclusions -- Acknowledgments -- References -- Chapter 29. Hall effect spectroscopy of thermal donors in silicon films synthesized by oxygen implantation -- 1. Introduction -- 2. Experiment -- 3. Interpretation and discussion -- 4. Conclusion -- Acknowledgments -- References -- Chapter 30. Perturbed angular correlation spectroscopy of acceptor-donor pairs in silicon, germanium and GaAs -- 1. Introduction -- 2. Experimental details -- 3. Results -- Acknowledgments -- References -- Chapter 31. Optical absorption by platinum in crystallin silicon -- 1. Introduction -- 2. Experimental details -- 3. General appearance of the triplet -- 4. Uniaxial stress data -- 5. Discussion -- Acknowledgments. , References -- Chapter 32. Surface characterization of high-dose Sb + implanted rapid thermal annealed monocrystalline silicon -- 1. Introduction -- 2. Experimental techniques -- 3. Results -- 4. Discussion and synopsis -- References -- Chapter 33. Chromium diffusivity in boron-doped silicon: reassessmen to f the activation energy from low tempera ture measurements -- 1. Introduction -- 2. Cr- B pairing reaction -- 3. Experimental details -- 4. Results -- 5. Discussion and conclusion -- Acknowledgment -- References -- Chapter 34. Regrowth of indium-implanted (100), (110 ) and (111) silicon crystals studied with Rutherford backscattering and perturbed angular correlation techniques -- 1. Introduction -- 2. Experimental details -- 3 . Results -- 4. Conclusions -- Acknowledgments -- References -- Chapter 35. Substrate-damage-free laser recrystallization of polycrystalline silicon -- 1. Introduction -- 2. Upper layer -- 3. Substrate damage -- 4. Results -- 5. Conclusions -- Acknowledgments -- References -- Chapter 36. A photoluminescence study of zinc-implanted silicon -- 1. Introduction -- 2. Experimental details -- 3. Results -- 4. Discussion -- 5. Summary -- Acknowledgments -- References -- Chapter 37. Kinetics of silicon amorphization by N + implantation: dose rate and substrate temperature effects -- 1. Introduction -- 2. Experimental details -- 3. Results and discussion -- References -- Chapter 38. Defects and solidification front morphologies in lamp zone-melting-recrystallized silicon-on-insulator films -- 1. Introduction -- 2. Experimental details -- 3. Solidification fronts -- 4. Defects -- 5. Preheating variation -- 6. Discussion -- 7. Conclusions -- Acknowledgments -- References -- Chapter 39. Strain compensation effects on the annealing of Ge +-B +-implanted silicon -- 1. Introduction -- 2. Experimental details -- 3. Results. , 4. Conclusions.