Publication Date:
2018-10-03
Description:
Author(s): G. M. Christian, S. Schulz, M. J. Kappers, C. J. Humphreys, R. A. Oliver, and P. Dawson In this paper we report on the emergence of a high energy band at high optically excited carrier densities in the low temperature photoluminescence spectra from polar InGaN/GaN single quantum well structures. This high energy band emerges at carrier densities when the emission from the localized gro... [Phys. Rev. B 98, 155301] Published Tue Oct 02, 2018
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics