Publication Date:
2016-04-05
Description:
Back-gated measurements on conductive silicon substrates have been performed to investigate the effect of stress voltage on the dynamic behaviour of GaN-on-silicon (GaN-on-Si) transistors. Two comparable samples were studied with the only difference being the vertical dislocation density. Results show a clear correlation between dislocation density and the ability of the GaN buffer to dynamically discharge under high stress conditions.
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics