Publication Date:
2012-12-22
Description:
June 2013 Publication year: 2013 Source: Vacuum, Volume 92 CuIn(S,Se) 2 (CISSe) thin films have been prepared onto soda-lime-glass (SLG) substrates by selenization and sulfurization of magnetron sputtered Cu–In precursors. The results indicate that the properties of the CISSe films are strongly dependent on the post-annealing treatment. After annealing at 400 °C for 20 min, the CISSe films have formed tetragonal (chalcopyrite) crystal structure and the diffraction peaks of the films shift systematically to the left with the temperature varying from 400 °C to 500 °C. EDAX study reveals that the compositions of CISSe films are Cu 0.83 In 1.17 S 1.67 Se 0.3 , Cu 0.86 In 1.13 S 1.61 Se 0.4 and Cu 0.82 In 1.15 S 1.54 Se 0.49 after annealing at 400 °C, 450 °C and 500 °C, respectively. The direct optical band gaps of the films slightly decrease from 1.44 ev to 1.32 ev with the increase of the temperature from 400 °C to 500 °C, and the optical absorption coefficient is over 10 5 cm −1 . The films annealed at 400 °C–500 °C are all found to be p-type and the resistivity is almost 10 −2 –10 −3 Ω cm. The carrier mobility of the film at 500 °C is almost as high as 1.701 cm 2 /V S. Highlights ► CuIn(S,Se) 2 is prepared by four-layered sputtering and selenizing processes. ► The preparation process can effectively prevent the indium loss and toxicity of H 2 Se. ► The high quality CuIn(S,Se) 2 thin films have been obtained by the process. ► The band gap of the deposited CuIn(S,Se) 2 films can be adjusted by heat treatment.
Print ISSN:
0042-207X
Electronic ISSN:
1879-2715
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
