Publikationsdatum:
2014-12-13
Beschreibung:
Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): Yang Zhao , Hui Wang , Hang Yang , Guoguang Wu , Qiang Jing , Fubin Gao , Wancheng Li , Baolin Zhang , Guotong Du InN epilayers were deposited on nitrided sapphire substrates using plasma-assisted molecular beam epitaxy (PAMBE) system. The physical properties of InN films under different growth temperatures were thoroughly studied. The XRD results indicated that as-prepared InN films without Indium droplets were preferentially oriented in the c-axis direction. The SEM results showed that the InN films grown in a two-dimensional mode with a thickness of ∼200 nm under the growth temperature of 460 °C. In addition, the optical absorption measurement exhibited that the energy bandgap of InN films was around 0.75–0.81eV and the PL spectra of the epilayers revealed an infrared emission. Moreover, the electrical properties of the films were discussed by Hall effect in detail.
Print ISSN:
0042-207X
Digitale ISSN:
1879-2715
Thema:
Maschinenbau
,
Physik
