In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 53, No. 4S ( 2014-04-01), p. 04EJ08-
Kurzfassung:
A silicon single-electron transistor (SET) with a floating gate (FG) that covers the entire SET structure is proposed and fabricated to study a nonvolatile and precise peak shift of Coulomb blockade oscillations. Large Coulomb blockade oscillations with a peak-to-valley current ratio as high as 14.1, a parallel peak position control without a change in peak height, and a long retention time of over one month are successfully demonstrated at room temperature. The proposed FG SET is suitable for hybrid SET/CMOS circuits for adding more functionalities into future very large scale integration (VLSI) devices.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.53.04EJ08
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2014
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7