In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 53, No. 4S ( 2014-04-01), p. 04ED08-
Abstract:
A new high-density AND-type split gate (ASG) flash memory realized by the Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 µm embedded flash process has been successfully demonstrated and fabricated. This ASG flash memory has a pair of symmetric floating gates for performance of 2 bits/cell. By device and process optimization, this cell can operate via highly efficient source side injection (SSI) and Fowler–Nordheim (FN) tunneling mechanisms for program and erase, respectively. Moreover, ASG flash memory significantly shrinks 50% of the unit cell size by sharing word line (WL) and eliminating bit line (BL) contact. Since the ASG flash memory cell and process used are inherited from proven split-gate technology, this work also provides a highly reliable solution for high-density embedded flash application.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.53.04ED08
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2014
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
