In:
Applied Physics Express, IOP Publishing, Vol. 9, No. 2 ( 2016-02-01), p. 021301-
Abstract:
Tin (Sn) was introduced into Ge for the preparation of a thin GeSnO x by thermal oxidation, which could strongly modulate the Schottky barrier height of metal/n-Ge contacts. A small amount of Sn doping in Ge could effectively suppress the formation of GeO x during oxidation, alleviating the Fermi-level pinning effect in Ge. This resulted in the strong correlation between the Schottky barrier heights of metal/GeSnO x /n-Ge contacts and metal work functions. The ohmic Al/n-Ge contacts and the extremely low leakage current density of the HfO 2 /Ge structure achieved by the simple thermal oxidation of a Sn-doped Ge surface suggested the potential of this method in the fabrication of Ge-based devices.
Type of Medium:
Online Resource
ISSN:
1882-0778
,
1882-0786
DOI:
10.7567/APEX.9.021301
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
2417569-9