In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 66, No. 21 ( 2017), p. 217304-
Abstract:
Hexagonal boron nitride (h-BN) based resistive switching device is fabricated with the multilayer h-BN film serving as an active material. The device shows the coexistence of forming-free and self-compliance bipolar resistive switching behavior with reproducible switching endurance and long retention time. Moreover, the device in pulse mode shows analog resistive switching characteristics, i.e. the resistance states can be continuously tuned by successive voltage pulses. This suggests that the device is also capable of mimicking the synaptic weight changes in neuromorphic systems.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
DOI:
10.7498/aps.66.217304
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2017
detail.hit.zdb_id:
203490-6