In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 55, No. 4 ( 2006), p. 2073-
Abstract:
This paper reports the fabrication of ZnMnO semiconductor by high-dose Mn impla ntion. We studied the influence of implantation dose and annealing on its optica l properties. The broad band at 575cm-1 in Raman spectrum is attribut ed to defects related to high-dose Mn implantion. The vibration modes at 528cm-1 are considered to be associated with Mn impurities. Room temperature photoluminescence spectra show that the high-dose Mn implantion can enhance the intensity in visible band.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2006