In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 46, No. 10 ( 1997), p. 2059-
Kurzfassung:
A new method for post-treatment of PS(porous silicon), sulfur passivation by microwave plasma assistance in vacuum,is reported in this paper.Fourier transform infrared spectrum indicated that the treated sample surface is mainly covered by SiSx and SiOy.Compared with the as etched PS,the photoluminescence (PL) intensity of the sample is 3.5 times stronger,and the 4nm blueshift of the PL peak was observed experimentally;furthermore,the intensity decay of the PL peak hasnot been observed after 60d in the atmosphere.Therefore,sulfur passivation is an effective post treatment for enhancing PL intensity and stabilization of PS.
Materialart:
Online-Ressource
ISSN:
1000-3290
,
1000-3290
Sprache:
Unbekannt
Verlag:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publikationsdatum:
1997