In:
Solid State Phenomena, Trans Tech Publications, Ltd., Vol. 131-133 ( 2007-10), p. 33-38
Abstract:
The knowledge and control of the structural and morphological properties of
nanocrystalline silicon is a fundamental requisite for its proper application in photovoltaics. To this purpose, nanocrystalline silicon films grown by Low Energy Plasma Enhanced Chemical Vapour
Deposition (LEPECVD) technique on different kinds of substrates were submitted to a systematic characterization using Raman spectroscopy, X-ray diffraction (XRD) and high-resolution
transmission electron microscopy (HRTEM). The results showed that the nature of the film substrate induces deep changes in the structural properties of the deposited films. The importance of
a Raman in–depth analysis for an accurate determination of the sample structure has been also demonstrated.
Type of Medium:
Online Resource
ISSN:
1662-9779
DOI:
10.4028/www.scientific.net/SSP.131-133
DOI:
10.4028/www.scientific.net/SSP.131-133.33
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2007
detail.hit.zdb_id:
2051138-3