In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 963 ( 2019-7), p. 714-717
Abstract:
In this work, quenching effect in the photoluminescence (PL) spectrum of divacancy defects in 4H SiC is investigated. Quenching in PL occurs when photoexcitation with an energy below a certain threshold is applied. In order to understand this phenomenon, we carried out Kohn-Sham density functional theory (DFT) calculations. In accordance with recent experimental results, we propose a physical model which explains the quenching phenomenon.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.963
DOI:
10.4028/www.scientific.net/MSF.963.714
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2019
detail.hit.zdb_id:
2047372-2