In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 778-780 ( 2014-2), p. 521-524
Abstract:
Threshold voltage (V TH ) of SiC-MOSFETs on various crystal faces has been investigated systematically using the same bias-temperature-stress (BTS) conditions. In addition, dependences of gate-oxide-forming process on V TH instability is also discussed. Nitridation treatments such as N 2 O and NH 3 post-oxidation annealing (POA) are effective in stabilization of V TH under both positive-and negative-BTS tests regardless of crystal face. On the other hand, serious V TH instability was confirmed in MOSFETs with gate oxide by pyrogenic oxidation followed by H 2 POA.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.778-780
DOI:
10.4028/www.scientific.net/MSF.778-780.521
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2014
detail.hit.zdb_id:
2047372-2