In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 679-680 ( 2011-3), p. 8-11
Abstract:
We investigated a way of reducing the stacking fault (SF) density on a highly nitrogen (N) doped 4H-SiC crystal. SFs were generated at highly N doped crystal exceeding 4 x 1019 cm-3 and the density was increased with increasing N concentration. We found that Al co-doping had the potential to suppress this SF generation and was effective up to an N concentration of about 1 x 1021cm-3. This effect depended strongly on the Al concentration. We discussed the reason for the SF suppression effect of Al co-doping.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.679-680
DOI:
10.4028/www.scientific.net/MSF.679-680.8
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2011
detail.hit.zdb_id:
2047372-2