In:
Applied Physics Express, IOP Publishing, Vol. 15, No. 1 ( 2022-01-01), p. 016502-
Abstract:
Narrow gate margin has been the critical limiting factor for the p-gate normally-off GaN HEMTs, imposing significant challenges in both gate drive design and gate reliability. In this work, by developing dopant-free p-type polarization doping technique in composition-graded InGaN layer, high-quality Schottky contact between the gate metal and cap layer was demonstrated, achieving excellent gate current blocking performance (10 –6 mA mm −1 ) after the turning-on of the gate heterojunction structure. Resultantly, normally-off GaN HEMTs with enhanced gate breakdown voltage up to 15.2 V was realized, being especially beneficial for the simplification of gate drive design and the safe operation of gate terminal.
Type of Medium:
Online Resource
ISSN:
1882-0778
,
1882-0786
DOI:
10.35848/1882-0786/ac407e
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2022
detail.hit.zdb_id:
2417569-9