In:
Coatings, MDPI AG, Vol. 9, No. 9 ( 2019-08-23), p. 538-
Abstract:
An additive manufacturing (AM) method for the deposition of metallic layer in micron scale on monocrystalline silicon wafer surface by high voltage induced weak electric arc machining (HV-μEAM) has been proposed. The process characteristics of HV-μEAM are analyzed to fulfil the metal material deposition. The influence of the processing parameters on the deposition effect were studied with copper as additive electrode material. Using the optimal parameters, a number of complex trajectory deposition experiments have been carried out and a QD character-type deposition layer with a height of 139.09 μm has been obtained. The deposition has good continuity and high forming precision. It is proven that the new method is achievable and efficient for patterning metallic materials in the micro- and nano-scale on the silicon substrates surface.
Type of Medium:
Online Resource
ISSN:
2079-6412
DOI:
10.3390/coatings9090538
Language:
English
Publisher:
MDPI AG
Publication Date:
2019
detail.hit.zdb_id:
2662314-6
