In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 792 ( 2003)
Abstract:
We have studied high-energy ion irradiation effects in bismuth by measuring the electrical resistivity at low temperature in relation to its structural change. Bismuth thin films (330–520 Å thick) are irradiated below ∼10 K with energetic (150–200-MeV) heavy ions. The resistivity of the specimen is measured in situ below ∼7.2 K during the irradiation. After the irradiation, annealing behavior of the resistivity is observed up to ∼30 K. The temperature dependence of the resistivity during annealing shows an abrupt increase around 20 K, implying re-crystallization of irradiation-induced amorphous regions. We have tried to detect a superconducting transition which may take place as a result of irradiation-induced amorphization. In the range of the measuring temperature down to ∼4.9 K, resistivity decrease due to superconducting transition has not been observed in the temperature dependence of the resistivity after 200-MeV 197 Au ion irradiation up to a fluence of 3.1×10 12 cm -2 .
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-792-R3.5
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2003
