In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 609 ( 2000)
Abstract:
The patterned nc-Si/a-SiN x :H superlattices were fabricated by using laser interference crystallization method and investigated with atomic force microscope (AFM), micro-Raman spectroscope, cross-section transmission electron microscope (TEM) and high resolution electron microscope (HREM). We found that after laser irradiation, self-assembled Si nanocrystallites (nc-Si) are formed within the initial a-Si:H sublayers, moreover, in the plane parallel to the surface of the films, these nc-Si orderly distribute in the certain regions with the same periodicity of 2.0 µm as phase shifting mask grating. Based on the structural analyses, the crystallization mechanism and the origin of the self-assembled phenomena are briefly discussed.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-609-A25.1
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2000
detail.hit.zdb_id:
605289-7
detail.hit.zdb_id:
2451008-7