In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 547 ( 1998)
Abstract:
Thin films of indium zinc oxide so called IZO were prepared with pulsed laser deposition. It was found that the crystalline structure, the composition and the morphology of the films as well as the optical and electrical properties were quite sensitive to the deposition conditions namely to the temperature and oxygen pressure. The crystallinity of the Zn k In 2 O 3+k (k from 1 to 5) thin films increases as the substrate temperature increases. An average transmittance of 85 % in the visible region was obtained for any k values. Optical measurements show a continuous decrease of the band gap as the zinc amount increases. The highest conductivity reported is for the ZnIn 2 O 4 , thin films deposited at 300 °C (σ = 1.2 10 3 S/cm). Increasing the amount of Zn (i.e. k value) was found to result in a conductivity decrease. Finally, a good correlation between the electric mobility and the optical mobility is obtained.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-547-157
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1998
