In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 484 ( 1997)
Abstract:
Single crystals of ZnSe, with varying amounts of Cr doping have been studied using Raman and photoluminescence(PL) spectroscopy. The Cr-doped samples show the existence of a coupling mechanism of longitudinal optical(LO) phonons of ZnSe with hole-plasmons. The dependence of intensity ratio of LO and transverse optical(TO) mode on temperature and excitation wavelength, has been attributed to the interaction of the field of LO phonons with the surface electric field in the depletion layer. The interaction of discreet phonons with the electronic continuum of conduction band in ZnSe is responsible for the shift of Raman peaks. The large electron capture cross-section of deep-level Cr 2+ and Cr 1+ impurities is inhibitive for the observation of band-to-band PL transition at ∼2.7eV in ZnSe:Cr.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-484-365
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1997