In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 955 ( 2006)
Abstract:
Single crystalline AlN epitaxial layers have been grown on and (0001) sapphire and 6H-SiC substrates by MOVPE technique at high temperatures in the range of 1340-1500°C. The structural qualities of the high temperature grown AlN layers were found to be good as evidenced by X-ray diffraction analyses results. By transmission electron microscopic analysis, dislocation densities of the layers were found to be 6.2 × 10 7 cm −2 or lower and the formation of dislocation loops was confirmed. High temperature bridge layers of AlN and Al x Ga 1−x N layers were grown on linear-groove patterned sapphire based AlN templates and 6H-SiC substrates. Al x Ga 1−x N bridge layers exhibited different growth behaviours depending on the direction of groove patterns on the sub-strates.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-0955-I04-03
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2006