In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 955 ( 2006)
Abstract:
An AlGaN/GaN photo-hetero-field-effect transistor (photo-HFET) with a p-type GaN gate was fabricated and its properties were compared with those of a HFET without a p-type GaN layer. The photo-HFET with a p-GaN gate exhibited a high signal-to-noise ratio of five orders of magnitude and a dark current density of 10 nA/mm at a drain-source bias of 5 V. In contrast, when the photo-HFET was irradiated with 365 nm (490 μW/cm 2 ) UV light, a photocurrent of over 1 mA/mm was achieved. The responsivity of the device was over 1 × 10 5 A/W.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-0955-I02-02
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2006