In:
Nanoscale Research Letters, Springer Science and Business Media LLC, Vol. 10, No. 1 ( 2015-12)
Abstract:
The InAs/GaAs quantum dots structure embedded in GaInP/Ga(In)As/Ge triple junction solar cell with and without Ga 0.90 In 0.10 As strain reducing layer was investigated. Conversion efficiency of 33.91% at 1,000 suns AM 1.5D with Ga 0.90 In 0.10 As strain reducing layer was demonstrated. A 1.19% improvement of the conversion efficiency was obtained via inserting the Ga 0.90 In 0.10 As strain reducing layer. The main contribution of this improvement was from the increase of the short-circuit current, which is caused by the reduction of the Shockley–Read–Hall recombination centers. Consequently, there was a decrease in open circuit voltage due to the lower thermal activation energy of confined carriers in Ga 0.9 In 0.1 As than GaAs and a reduction in the effective band gap of quantum dots.
Type of Medium:
Online Resource
ISSN:
1931-7573
,
1556-276X
DOI:
10.1186/s11671-015-0821-7
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2015
detail.hit.zdb_id:
2253244-4
detail.hit.zdb_id:
3149496-1