In:
ECS Journal of Solid State Science and Technology, The Electrochemical Society, Vol. 11, No. 5 ( 2022-05-01), p. 053012-
Abstract:
In this work, we investigated the ferroelectric properties of Hf 0.5 Zr 0.5 O 2 (HZO) Metal-Ferroelectric-Metal (MFM) capacitors on various refractory electrodes, including TiN, TaN, W, and Mo. By comparing different electrodes and annealing temperature, we found that the MFM capacitors with TiN and W electrodes showed both higher remanent polarization (2P r ) and lower leakage current for post-metal annealing (PMA) temperatures ranging from 400 °C to 600 °C. Moreover, the MFM capacitor with W electrode showed better saturated polarization-voltage (P-V) curve and less “wake up effect” during the polarization switching cycles, while the MFM capacitor with TiN electrode showed the lowest leakage current. The correlation of crystallization quality studied by X-ray diffraction and the ferroelectric characteristics for each type of MFM capacitors were also presented and compared in this study.
Type of Medium:
Online Resource
ISSN:
2162-8769
,
2162-8777
DOI:
10.1149/2162-8777/ac6f1c
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2022