In:
ECS Transactions, The Electrochemical Society, Vol. 44, No. 1 ( 2012-03-16), p. 57-62
Abstract:
In this paper, the construction and stability of thin-film transistors (TFTs) with ZnO as active layer are investigated. The bottom-gated ZnO TFTs exhibit n-channel enhancement mode behavior, including an on/off current ratio of 2.4×1E7, a low off-current value in the order of pA, a field effect mobility of 1.8cm*cm/V•s. The threshold voltage shift in positive direction with increasing the channel length is clearly observed. The application of positive and negative stress results in the device transfer characteristics shifting in positive and negative direction. The stressed devices show a logarithmic time-dependent threshold voltage shift and recover to near-original characteristic without any annealing
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2012
detail.hit.zdb_id:
2217591-X
detail.hit.zdb_id:
2251888-5
